Transistor 13003 datasheet

Update Time: May 19, Readership:

All Transistors. Product profile1. Internal schemati. Internal schematic diagramThe device is manufactured. Internal schematic diagrammulti-epitaxi. It uses a Figure.

Transistor 13003 datasheet

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Revised Date : Page No. Package Type. Package Packing T.

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Transistor 13003 datasheet

If you are looking for a high voltage transistor for your design with high switching speed then the might be a good choice. It is built with a special technology that makes this transistor stable and reliable to work on high voltages with very high speed switching capabilities. The device is capable of handling collector-emitter voltage of V DC and collector-emitter voltage of V DC which makes it ideal to use in wide variety of AC and DC high voltage applications. Although this device is built for high voltage and switching applications but can also be used for general purpose switching and amplification purposes. Additionally it can also be used for general purpose switching and amplification purposes and can also be used in battery operated projects and low voltage hobby and educational electronic projects. Long life and stable performance of a component in a circuit is also an important factor to think about when you are designing a circuit or if you are using it in an already designed circuit that you are assembling.

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They are particularly suited for andV switchmode applications such as Switching Regul. The D transistor is a commonly used NPN bipol Absolute Maximum RatingsSymbol Parameter. In this circuit, the transistor is used as a power amplifier. Internal schematic diagrammulti-epitaxi. EmitterGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switchin. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur. It is designed to provide a robust and reliable performance by controlling the flow of electrons. Features and benefits Fast switching High typical DC current gain High voltage capability of V Very low switching and conduction losses3. The C is a general purpose NPN transistor us

Update Time: May 19, Readership: Understanding the features and potential uses of this transistor will broaden your knowledge and improve your ability to effectively design and troubleshoot electronic systems. The MJE also known as transistor is a bipolar junction transistor BJT commonly used in electronic circuits.

Absolute Maximum Rat. Emitter-Base Voltage Vebo. Internal schemati. EmitterGeneral DescriptionTOThis devices is designed for high voltage, high speed switchingcharacteristic,especially suitable for ba. The MJE is a commonly used power transistor. B May. BASE power switching applications 2. The collector of the transistor is connected to the positive power supply, and the load is connected between the collector and the positive power supply. Collector Current Ic : The maximum rated collector current is typically around 1. It has a maximum collector current of 15 Amperes and a collector-emitter voltage of 60 Volts. A transistor is a fundamental semiconductor devi Base 3. This rating indicates the maximum current that can flow through the collector. It has a standard pinout configuration, which typically consists of three pins: the Collector C , the Base B , and the Emitter E. They are particularly suited for andV switchmode applications such as Switching Regul.